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Panasonic

AQY410EH

Bristar Part No.: AQY410EH-BRI

Description:
PhotoMOS GE 1 Form B (DIP4-pin type)
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Stock: 0

Product Specification
AQY410EH-BRI
Product Type
PhotoMOS GE 1 Form B (DIP4-pin type)
Series
PhotoMOS GE 1 Form B (DIP4-pin type)
Type
GE
Product Number
AQY410EH
Packing style
Tube packing style
SPQ
1000
Package
DIP4
Terminal Shape
Through hole terminal
Contact arrangement
1 Form B
[Recommended operating conditions] Continuous load current [ IL ]
Max.
Ambient temperature
Storage [ Tstg ]
Product name
GE 1 Form B
[Recommended operating conditions] LED current [ IF ]
Min.
Voltage type
AC/DC
LED forward current [ IF ]
50 mA
[Recommended operating conditions] Load voltage [ VL ]
Max.
LED reverse voltage [ VR ]
5 V
Peak forward current [ IFP ]
1 A
Power dissipation [ Pin ]
75 mW
Load voltage [ VL ]
350 V
Continuous load current [ IL ]
0.13 A
Peak load current [ Ipeak ]
0.4 A
Power dissipation [ Pout ]
500 mW
Total power dissipation [ Pt ]
550 mW
I/O isolation voltage [ Viso ]
5,000 Vrms
LED operate current (Typical)
1.4 mA
LED operate current (Maximum)
3.0 mA
LED turn off current (Minimum)
0.4 mA
LED turn off current (Typical)
1.3 mA
LED dropout voltage (Typical) [ VF ]
1.25 V
LED dropout voltage (Maximum) [ VF ]
1.5 V
On resistance (Typical) [ Ron ]
18 ohm
ON resistance (Maximum) [ Ron ]
25 ohm
Off state leakage current (Maximum) [ ILeak ]
10μA
Over Current Protection
Nothing
Turn on time (Typical)
1.0 ms
Turn on time (Maximum)
3.0 ms
Turn off time (Typical)
0.3 ms
Turn off time (Maximum)
1.0 ms
I/O capacitance (Typical) [ Ciso ]
0.8 pF
I/O capacitance (Maximum) [ Ciso ]
1.5 pF
Initial I/O isolation resistance (Minimum) [ Riso ]
1,000 M ohm
Load current
130 mA
Download Datasheet/Report
Quantity Unit price Total price
1000 USD 0.0000 USD 0.00

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